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| RF2310 4 Typical Applications * General Purpose High Bandwidth Gain Blocks * IF or RF Buffer Amplifiers * Broadband Test Equipment * Final PA for Medium Power Applications * Driver Stage for Power Amplifiers WIDEBAND GENERAL PURPOSE AMPLIFIER Product Description The RF2310 is a general purpose, low-cost, high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 2500MHz. The gain flatness over a very wide bandwidth makes the device suitable for many applications. The device is self-contained with 50 input and output impedances and requires only two external DC biasing elements to operate as specified. 0.008 0.004 0.018 0.014 -A- 4 GENERAL PURPOSE AMPLIFIERS 0.196 0.189 0.050 0.157 0.150 0.244 0.229 Dimensions in mm 0.068 0.053 8 MAX 0 MIN 0.034 0.016 0.009 0.007 NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity 0.005 with respect to datum "A". Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS u Package Style: SOIC-8 GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features * DC to well over 2500MHz Operation * Internally Matched Input and Output * 15dB Small Signal Gain VCC 1 GND 2 GND 3 RF IN 4 8 RF OUT 7 GND 6 GND 5 GND * 5dB Noise Figure * +19dBm Output Power * Single 3.5V to 6V Positive Power Supply Ordering Information RF2310 RF2310 PCBA Wideband General Purpose Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev C5 010717 4-75 RF2310 Absolute Maximum Ratings Parameter Rating Unit Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Supply Voltage -0.5 to +6.0 VDC Input RF Power +10 dBm Storage Temperature -40 to +150 C Junction Temperature 175 C Thermal Resistance, Junction to 179 C/W Case Notes: case reference: pins 5-7, conditions: no signal in and both RF ports terminated in 50; average junction temperature measured at 85C ambient: 143C 4 GENERAL PURPOSE AMPLIFIERS Parameter Operating Range Overall Frequency Range Supply Voltage Operating Current (ICC) Operating Ambient Temperature Specification Min. Typ. Max. 100 3.5 40 -40 20 50 2500 6.0 25 65 +85 Unit MHz V mA mA C dB dB dB dBm dBm dB dB dBm dBm dB dB dBm dBm dB dB dB dBm dBm dB dB dBm dBm dB dB dBm dBm Condition VCC =3.6V, Temp=27C VCC =5V, Temp=27C 3.6V Performance Gain Gain Noise Figure Output IP3 OP1dB Gain Noise Figure Output IP3 OP1dB Gain Noise Figure Output IP3 OP1dB 16.2 15.3 2.5 +22.0 +10 15 2.7 +23.0 +10 16 2.4 +21.0 +10 17 16.5 3 +31.0 +17 15.6 3.5 +33.0 +18 15 2.8 +26.0 +17 Freq=300MHz, VCC =3.6V, Temp=27C Freq=900MHz, VCC =3.6V, Temp=27C Freq=1950MHz, VCC =3.6V, Temp=27C Freq=2450MHz, VCC =3.6V, Temp=27C 5V Performance Gain Gain Noise Figure Output IP3 OP1dB Gain Noise Figure Output IP3 OP1dB Gain Noise Figure Output IP3 OP1dB 14.0 +28.0 Freq=300MHz, VCC =5V, Temp=27C Freq=900MHz, VCC =5V, Temp=27C Freq=1950MHz, VCC =5V, Temp=27C Freq=2450MHz, VCC =5V, Temp=27C 4-76 Rev C5 010717 RF2310 Pin 1 Function VCC Description Power supply pin. An external bypass capacitor is recommended. The total supply current is shared between this pin and pin 8 (through the inductor). Interface Schematic VCC 2 GND RF IN 5 6 7 8 GND GND GND RF OUT Same as pin 2. Same as pin 2. Same as pin 2. RF output and bias pin. Biasing is accomplished with an external choke inductor to VCC that provides high impedance at the operating frequency. Because DC is present on this pin, a DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. RF OUT Application Schematic VCC = 5V 100 nF 22 pF 1 2 3 22 pF 8 100 nH RF OUT 22 pF 7 6 5 RF IN 4 Rev C5 010717 4-77 GENERAL PURPOSE AMPLIFIERS 3 4 GND RF IN Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. To achieve the performance as specified, and to minimize instability, it is recommended to have a local ground plane under the device, as shown in the evaluation board layout. Same as pin 2. RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC-coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Bias 4 RF2310 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1-3 VCC C4 100 pF L1 200 nH P1-1 VCC 1 C2 1 nF 2 3 J1 SMA IN 50 strip 4 C1 330 pF 2310400A C5 330 pF C6 1 F OUT 50 strip 8 7 6 5 C3 1 nF J2 SMA 4 GENERAL PURPOSE AMPLIFIERS P1 H3M P1-1 1 2 P1-3 3 PC GND VCC 4-78 Rev C5 010717 RF2310 Evaluation Board Layout Board Size 2.02" x 2.02" Board Thickness 0.031", Board Material FR-4 4 GENERAL PURPOSE AMPLIFIERS Rev C5 010717 4-79 RF2310 S11 Vcc=3V S11 VCC = 3V 1.0 0.6 2.0 S11 VCC = 5V S11 Vcc=5V 0.6 Swp Max 3.005GHz 1.0 Swp Max 3.005GHz 2.0 0.8 0 3. 0.8 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 2 GHz GENERAL PURPOSE AMPLIFIERS .0 -2 -0. 6 -0.8 -0. 6 Swp Min 0.01GHz -0.8 .0 -2 -1.0 S22 Vcc=3V S22 VCC = 3V 1.0 0.6 0.6 S22 Vcc=5V S22 VCC = 5V Swp Max 3.005GHz 2.0 1.0 -1.0 Swp Max 3.005GHz 2.0 0.8 0 3. 0.8 0 3. 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 1.6 GHz 200 MHz 2 GHz 2.5 GHz .0 -2 -0. 6 -0.8 -0. 6 Swp Min 0.01GHz -0.8 .0 -2 -1.0 S-Parameter Conditions: All plots are taken at ambient temperature=25C. NOTE: All S11 and S22 plots shown were taken from an RF2310 evaluation board with external input and output tuning components removed and the reference points at the RF IN and RF OUT pins. 4-80 -1.0 Rev C5 010717 -3 -3 .4 -0 .4 -0 Swp Min 0.01GHz -4. 0 -5.0 .0 -4. 0 -5.0 -0.2 -0.2 50 MHz -10.0 -10.0 100 MHz 2 GHz 4.0 5.0 0 0 10.0 1 GHz 0.2 4.0 5.0 1 GHz -3 0. 4 -3 .4 -0 .4 -0 Swp Min 0.01GHz -4. 0 -5.0 .0 -4. 0 -5.0 -0.2 -0.2 4.0 5.0 -10.0 -10.0 4 2 GHz 1 GHz 80 MHz 1 GHz 100 MHz 4.0 5.0 0 0 10.0 10.0 2.5 GHz 0.2 4.0 5.0 0. 4 2.5 GHz .0 .0 0. 4 0. 4 0 3. 4.0 5.0 0.2 0.2 10.0 RF2310 Gain versus Temperature Frequency = 900 MHz 17.2 Vcc=3V 17.0 Vcc=5V 16.8 16.6 16.4 16.2 16.0 15.8 15.6 15.4 -60.0 32.0 30.0 34.0 36.0 OIP3 versus Temperature Frequency = 900 MHz OIP3 (dBm) Gain (dB) 28.0 26.0 24.0 22.0 Vcc=3V 20.0 Vcc=5V 18.0 -60.0 4 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) OP1dB versus Temperature Frequency = 900 MHz 19.0 67.0 ICC versus Temperature Frequency = 900 MHz 17.0 57.0 15.0 47.0 OP1dB (dBm) ICC (mA) 13.0 37.0 11.0 27.0 9.0 7.0 Vcc=3V Vcc=5V 17.0 Vcc=3V Vcc=5V 5.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 7.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) Gain versus Temperature Frequency = 1950 MHz 16.2 Vcc=3V 16.0 34.0 Vcc=5V 32.0 30.0 15.6 36.0 OIP3 versus Temperature Frequency = 1950 MHz 15.8 OIP3 (dBm) Gain (dB) 28.0 26.0 24.0 15.4 15.2 15.0 22.0 Vcc=3V 20.0 Vcc=5V 18.0 -60.0 14.8 14.6 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) Rev C5 010717 4-81 GENERAL PURPOSE AMPLIFIERS RF2310 OP1dB versus Temperature Frequency = 1950 MHz 21.0 68.0 ICC versus Temperature Frequency = 1950 MHz 19.0 58.0 17.0 48.0 OP1dB (dBm) 15.0 13.0 ICC (mA) 38.0 11.0 28.0 4 GENERAL PURPOSE AMPLIFIERS 9.0 Vcc=3V 7.0 Vcc=5V 5.0 -60.0 8.0 -60.0 Vcc=5V 18.0 Vcc=3V -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) Gain versus Temperature Frequency = 2450 MHz 16.0 31.0 OIP3 versus Temperature Frequency = 2450 MHz 15.5 29.0 15.0 27.0 14.5 OIP3 (dBm) Vcc=3V Gain (dB) 25.0 14.0 23.0 13.5 21.0 13.0 19.0 Vcc=3V Vcc=5V 17.0 -60.0 12.5 Vcc=5V 12.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) OP1dB versus Temperature Frequency = 2450 MHz 19.0 67.0 ICC versus Temperature Frequency = 2450 MHz 17.0 57.0 15.0 47.0 OP1dB (dBm) ICC (mA) 13.0 37.0 11.0 27.0 9.0 7.0 Vcc=3V Vcc=5V 17.0 Vcc=3V Vcc=5V 5.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 7.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (C) Temperature (C) 4-82 Rev C5 010717 RF2310 S11 of Evaluation Board versus Frequency Temperature = +25C 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 Vcc=3V 1.1 Vcc=5V 1.0 0.0 500.0 1000.0 1500.0 2000.0 2500.0 1.0 0.0 500.0 1000.0 1500.0 2000.0 2500.0 2.0 Vcc=3.0V 1.5 Vcc=5.0V 5.0 S22 of Evaluation Board versus Frequency Temperature = +25C 4.5 4.0 Output VSWR Input VSWR 3.5 3.0 2.5 4 GENERAL PURPOSE AMPLIFIERS Frequency (MHz) Frequency (MHz) Reverse Isolation (S12) of Evaluation Board versus Frequency, Temperature = +25C -19.5 Vcc=3.0V -20.0 Vcc=5.0V -20.5 Reverse Isolation (dB) -21.0 -21.5 -22.0 -22.5 -23.0 -23.5 -24.0 0.0 500.0 1000.0 1500.0 2000.0 2500.0 Frequency (MHz) Rev C5 010717 4-83 4 GENERAL PURPOSE AMPLIFIERS 4-84 RF2310 Rev C5 010717 |
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